Automatic Nonlinear Modeling Technique for GaAs HEMT

Статья в сборнике трудов конференции

A new technique for nonlinear transistor modeling is suggested. The technique includes an analytical extraction and a multistage optimization, providing fully automated modeling. An extraction algorithm for the parameters of an internal voltage-controlled current source Ids is shown. A fully automated workflow of small-signal model extraction is presented. An approach for obtaining parameters of nonlinear capacitances is described. A 0.15um GaAs pHEMT nonlinear model was built and verified with measured IV-curve, multi-bias S-parameters and power characteristics.

Библиографическая запись: Automatic Nonlinear Modeling Technique for GaAs HEMT / D. V. Bilevich [et. al.] // XII International scientific and technical conference "Dynamics of Systems, Mechanisms and Machines" (13–15 November 2018, Omsk, Russias): Conference Paper. - Omsk: IEEE, 2018. - P. 8601444. - DOI: 10.1109/Dynamics.2018.8601444.

Конференция:

• XII Международная IEEE научно-техническая конференция "Динамика систем, механизмов и машин"
• Россия, Омская область, Омск, 13-15 ноября 2018,
• Международная

Издательство:

Омский государственный технический университет

Россия, Омская область, Омск