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Automatic Large-Signal GaAs HEMT Modeling for Power Amplifier Design

Статья в журнале

In this paper, a new nonlinear transistor modeling technique for gallium arsenide high-electron mobility transistor (GaAs HEMT) is proposed. The technique includes an analytical extraction, enhanced by applying nonlinear least squares regression and modified-median method, and a multistage optimization, allowing completely automatic large-signal modeling. Convergence of the technique is proved by a threefold model building procedure followed by the comparison of simulated data like IV-curve and load-pull contours. A 0.15 μm GaAs pHEMT nonlinear model was built and verified with measured IV-curve, multiple bias S-parameters and power characteristics. A good agreement with the measured data proves that the proposed technique enables automatic nonlinear transistor modeling for power MMIC amplifier design.

Журнал:

  • AEU - International Journal of Electronics and Communications
  • Elsevier GmbH (Amsterdam)
  • Индексируется в Scopus

Библиографическая запись: Automatic Large-Signal GaAs HEMT Modeling for Power Amplifier Design / A. A. Popov [et. al.] // AEU - International Journal of Electronics and Communications. – 2019. – Vol. 100. – P. 138–143. – DOI: 10.1016/j.aeue.2019.01.008

Индексируется в:

Год издания:  2019
Страницы:  138 - 143
Язык:  Английский
DOI:  10.1016/j.aeue.2019.01.008