A new extraction flow of the small-signal switch-HEMT model based on the parasitic resistance scanning algorithm

Статья в журнале

Recent research interest in switch High Electron Mobility Transistor (HEMT) modeling revealed the special modeling requirement that is a parasitic capacitance shell surrounding the equivalent circuit. Despite the robust determination of parasitic capacitances, one still may face several problems when extracting a small-signal switch-HEMT model. Practical switch-HEMT test structures include different configurations of gate network with additional microstrip lines, large-value resistors, and via-holes. Ignoring parts of these networks results in unfavorable errors when comparing measured and simulated results. Another problem may arise when extracting the switch-HEMT equivalent circuit parameters from the measured S-parameters of the grounded gate test structures: obtained parasitic resistances can be exaggerated, resulting in negative values of intrinsic channel resistance (conductance). This paper presents a new switch-HEMT extraction flow intended to address the mentioned challenges. To eliminate an excessive gate inductance attributed to via-hole, we introduce a concept of the gate network de-embedding. A negative channel resistance (conductance) problem is handled by applying a new parasitic resistance scanning algorithm that allows finding the model parameter vector with reasonable positive values in the vicinity of the S-parameters modeling error minimum. Accurate S-parameters modeling results verify the proposed extraction flow. Obtained small-signal switch-HEMT models are validated by designing and manufacturing a 2 dB digital step attenuator section.

Журнал:

• International Journal of RF and Microwave Computer-Aided Engineering
• Willey (Hoboken)
• Индексируется в Scopus, Web of Science

Библиографическая запись: Popov, A. A. A new extraction flow of the small-signal switch-HEMT model based on the parasitic resistance scanning algorithm [Electronic resource] / A. A. Popov, I. M. Dobush, A. S. Salnikov // International Journal of RF and Microwave Computer-Aided Engineering. – 2022. – Vol. 32. – Iss. 9. – P. e23278. – DOI: 10.1002/mmce.23278

Индексируется в:

• Scopus ( https://www.scopus.com/record/display.uri?eid=2-s2.0-85131376393&origin=resultslist&sort=plf-f&src=s&st1=10.1002%2fmmce.23278&sid=d92ca8ceae218d7d33ab552dec05cda0&sot=b&sdt=b&sl=23&s=DOI%2810.1002%2fmmce.23278%29&relpos=0&citeCnt=0&searchTerm=&featureToggles=FEATURE_NEW_DOC_DETAILS_EXPORT:1,FEATURE_EXPORT_REDESIGN:1 )