Small-signal and noise GaAs pHEMT modeling for low noise amplifier design

Статья в журнале

Small-signal and noise GaAs pHEMT modeling techniques that include analytical extraction followed by optimization are demonstrated. The following measurement processing steps were carried out before the parameter extraction: de-embedding, data smoothing and selecting the bias mode appropriate for the extraction of parasitic resistances and inductances. A low-noise amplifier operating in 5G frequency band was designed using the resulting model. A comparison between simulation and measurements of noise factor and S-parameters of the obtained low-noise amplifier is presented.

Журнал:

Journal of Physics: Conference Series
IOP Publishing (Bristol)

Библиографическая запись: Small-signal and noise GaAs pHEMT modeling for low noise amplifier design / A. A. Popov [et. al.] // Journal of Physics: Conference Series. – 2020. – Vol. 1499. – No. 11. – P. 012033. – DOI: 10.1088/1742-6596/1499/1/012033

Ключевые слова:

EXTRACTION GALLIUM ARSENIDE III-V SEMICONDUCTORS PARAMETER ESTIMATION SCATTERING PARAMETERS

Индексируется в:

Авторы: Попов А. А., Билевич Д. В., Метель А. А., Сальников А. С., Добуш И. М., Горяинов А. Е., Калентьев А. А.

Год издания: 2020

Страницы: 1 - 6

Язык: Английский

DOI: 10.1088/1742-6596/1499/1/012033