Low temperature ICP etching of InP/InGaAsP heterostructure in Cl2-based plasma

Статья в журнале

The paper presents the process development results of low temperature ICP etching of InP/InGaAsP heterostructure in a Cl2/Ar/N2 plasma using multi-stage process. It is shown that the introduction of additional polishing etch steps effectively removes defect layer formed after etching of the heterostructure. The angle of inclination of the side walls of the elements formed by etching reached 87º, while the thickness of the defect layer did not exceed 80 nm.

Журнал:

• Journal of Physics: Conference Series
• Institute of Physics Publishing (Briston)
• Индексируется в Scopus

Библиографическая запись: Low temperature ICP etching of InP/InGaAsP heterostructure in Cl2-based plasma / S. V. Ishutkin [et. al.] // Journal of Physics: Conference Series. - 2019. - Vol. 1393. - P. 012088. - DOI: 10.1088/1742-6596/1393/1/012088